The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Oct. 06, 2020
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Xiaojun Chen, Penang, MY;

Heng Wang, Eriskirch, DE;

Jong Ho Na, Regensburg, DE;

Alvaro Gomez-Iglesias, Regensburg, DE;

Jürgen Off, Regensburg, DE;

Philipp Drechsel, Regensburg, DE;

Thomas Lehnhardt, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 25/075 (2006.01); H10H 20/01 (2025.01); H10H 20/81 (2025.01); H10H 20/812 (2025.01); H10H 20/816 (2025.01); H10H 20/821 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/812 (2025.01); H01L 25/0753 (2013.01); H10H 20/0137 (2025.01); H10H 20/816 (2025.01); H10H 20/821 (2025.01); H10H 20/8215 (2025.01); H10H 20/825 (2025.01);
Abstract

In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor region of a first conductivity type, an active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers, a second semiconductor region of a second conductivity type and a plurality of channels extending through the active zone, wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone, wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.


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