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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12324262 B1

PDFFull Text
Date of Patent:
Jun. 03, 2025

Filed:

Nov. 29, 2023

Imaging element, stacked-type imaging element and solid-state imaging apparatus

Applicant:

Sony Group Corporation, Tokyo, JP;

Inventors:

Akira Furukawa, Kumamoto, JP;

Yoshihiro Ando, Kanagawa, JP;

Hideaki Togashi, Kanagawa, JP;

Fumihiko Koga, Kanagawa, JP;

Assignee:

Sony Group Corporation, Tokyo, JP;

Attorney:

SHERIDAN ROSS P.C.

Primary Examiner:

Britt D Hanley

Assistant Examiner:

Victor V Barzykin

Int. Cl.
CPC ...
H10F 39/00 (2025.01); A23B 70/20 (2025.01); H04N 23/45 (2023.01); H04N 23/55 (2023.01); H10D 18/00 (2025.01); H10D 62/13 (2025.01); H10D 89/60 (2025.01); H10F 19/75 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01); H10H 20/823 (2025.01); H10K 30/30 (2023.01); H10K 30/81 (2023.01); H10K 39/32 (2023.01);
U.S. Cl.
CPC ...
H10F 39/80373 (2025.01); A23B 70/20 (2025.01); H04N 23/45 (2023.01); H04N 23/55 (2023.01); H10D 18/211 (2025.01); H10D 62/148 (2025.01); H10D 89/921 (2025.01); H10F 19/75 (2025.01); H10F 39/1825 (2025.01); H10F 39/1865 (2025.01); H10F 39/199 (2025.01); H10F 39/8023 (2025.01); H10F 39/803 (2025.01); H10F 39/8063 (2025.01); H10F 39/811 (2025.01); H10F 39/813 (2025.01); H10H 20/8232 (2025.01); H10K 30/30 (2023.02); H10K 30/81 (2023.02); H10K 39/32 (2023.02); Y02E 10/549 (2013.01);
Abstract

Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nphotoelectric conversion unit segment is formed of an ncharge storage electrode segment, an ninsulating layer segment and an nphotoelectric conversion layer segment. As n increases, the nphotoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nphotoelectric conversion unit segment.

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