The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Nov. 11, 2020
Applicant:

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Mitsuhito Mase, Hamamatsu, JP;

Jun Hiramitsu, Hamamatsu, JP;

Hiroaki Ishii, Hamamatsu, JP;

Yuma Tanaka, Hamamatsu, JP;

Toshinori Ito, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8033 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01);
Abstract

A multiplying image sensor includes a semiconductor layer having a first surface and a second surface and a wiring layer provided on the second surface. The semiconductor layer includes a plurality of pixels arranged along the first surface. Each of the plurality of pixels includes a first semiconductor region, a second semiconductor region formed on the second surface side with respect to at least a part of the first semiconductor region and divided for each of the plurality of pixels, and a well region formed in the second semiconductor region so as to be separated from the first semiconductor region and forming a part of a pixel circuit. At least a part of the first semiconductor region and at least a part of the second semiconductor region form an avalanche multiplication region.


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