The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Dec. 18, 2020
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Yusuke Sato, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10K 39/32 (2023.01); H04N 25/616 (2023.01); H04N 25/771 (2023.01); H10F 39/18 (2025.01); H10K 30/30 (2023.01); H10K 30/81 (2023.01);
U.S. Cl.
CPC ...
H10F 39/182 (2025.01); H04N 25/771 (2023.01); H10K 30/30 (2023.02); H10K 30/81 (2023.02); H10K 39/32 (2023.02); H04N 25/616 (2023.01);
Abstract

Provided is a multilayer imaging device capable of both securing a wide sensitive region and securing an accumulated amount of charges. An imaging device according to an embodiment comprises a pixel, the pixel including a photoelectric conversion layer (); a first electrode () positioned close to a first surface of the photoelectric conversion layer and electrically connected to the photoelectric conversion layer; a second electrode () positioned on a second surface opposite to the first surface of the photoelectric conversion layer; a charge accumulation electrode () disposed close to the first surface of the photoelectric conversion layer and spaced apart from the first electrode in a direction parallel to the first surface; and a third electrode () disposed at a position to have a portion overlapping a gap between the first electrode and the charge accumulation electrode in a direction perpendicular to the first surface.


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