The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Jan. 17, 2025
Applicant:
Industry-academic Cooperation Foundation Gyeongsang National University, Jinju-si, KR;
Inventors:
Jun Hong Park, Jinju-si Gyeongsangnam-do, KR;
Hyeong Tae Kim, Changwon-si, KR;
Do Hyeon Lee, Jinju-si, KR;
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/282 (2025.01); H03K 19/20 (2006.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01);
U.S. Cl.
CPC ...
H10F 30/282 (2025.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01); H03K 19/20 (2013.01);
Abstract
A transition metal chalcogenide flake manufactured by the molten salt-assisted thermal chemical vapor deposition method according to a preferred embodiment can be uniformly and evenly grown on a large-area substrate with a size of several to several hundred micrometers in scale, and a light-gated transistor using this as a light sensing layer can perform logical operations of AND, OR, and summation operations in response to light stimulation and enable a low-power synaptic operation response.