Display apparatus having an oxide semiconductor pattern

Abstract

A display apparatus can include a buffer layer on a flexible substrate; a first thin film transistor on the buffer layer including a first semiconductor pattern, a first gate electrode, a first source electrode and a first drain electrode, a second thin film transistor including a second semiconductor pattern, a second gate electrode, a second source electrode and a second drain electrode, and a passivation layer on the first and the second thin film transistors. Also, the display apparatus includes a planarization layer, a light-emitting device including a first electrode, a light-emitting layer and a second electrode on the planarization layer, and an encapsulating element on the light-emitting device. Also, the light-emitting device is electrically connected to the first thin film transistor, the first semiconductor pattern includes silicon, and the second semiconductor pattern includes an oxide semiconductor pattern, and the second gate electrode includes lower and upper electrodes.