The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Apr. 15, 2022
Semiconductor Manufacturing South China Corporation, Shanghai, CN;
Zhong Yuan Liu, Shanghai, CN;
Semiconductor Manufacturing South China Corporation, Shanghai, CN;
Abstract
A method of forming a semiconductor structure includes: providing a substrate having a first region and a plurality of second regions, the first region being located between adjacent second regions; forming a plurality of discrete first fins on the first region; forming a plurality of discrete second fins on a second region of the plurality of second regions; forming an isolation layer on the substrate to cover portions of sidewalls of the plurality of discrete first fins and the plurality of discrete second fins, a top surface of the isolation layer being lower than top surfaces of the plurality of discrete first fins and the plurality of discrete second fins; after the isolation layer is formed, removing the plurality of discrete second fins to form a plurality of isolation openings in the isolation layer; and forming a filling layer in the plurality of isolation openings.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile