The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Apr. 18, 2022
Denso Corporation, Kariya, JP;
Hirofumi Kida, Toyota, JP;
Hidemoto Tomita, Toyota, JP;
Tomohiko Mori, Nagakute, JP;
Hideya Yamadera, Nagakute, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes a nitride semiconductor layer, a source electrode, a drain electrode, and an insulating gate portion. The nitride semiconductor layer has an element part and a peripheral withstand voltage part. The source electrode is disposed adjacent to a first main surface of the nitride semiconductor layer. The drain electrode is disposed adjacent to a second main surface of the nitride semiconductor layer. The nitride semiconductor layer is formed with a first groove on the first main surface in the element part, and a second groove on the first main surface in the peripheral withstand voltage part. A JFET region is embedded in the first groove in the element part. An inclination angle of a side surface of the first groove adjacent to a channel portion of a body region is smaller than an inclination angle of a side surface of the second groove.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile