The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Jul. 27, 2022
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Woo Cheol Lee, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/34 (2023.02); H10B 63/84 (2023.02); H10N 70/253 (2023.02); H10N 70/8833 (2023.02);
Abstract
A semiconductor device according to an embodiment of the present disclosure includes a substrate, a gate electrode layer disposed over the substrate, a gate dielectric layer disposed on the gate electrode layer, a channel electrode layer disposed on the gate dielectric layer, a threshold switching layer disposed on the channel electrode layer, and a source electrode layer and a drain electrode layer that are disposed on the threshold switching layer to be spaced apart from each other.
Lee, Woo. (2025). Semiconductor devices performing threshold switching (U.S. Patent No. 12324167). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12324167
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile