The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

May. 25, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jueun Park, Suwon-si, KR;

Sanghyuck Moon, Suwon-si, KR;

Seyoung Kim, Suwon-si, KR;

Jaeho Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/77 (2023.01); H04N 25/778 (2023.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H04N 25/77 (2023.01);
Abstract

An image sensor includes: a pixel array including a plurality of pixels, wherein each of the pixels includes first and second photodiodes, first and second transfer gates, and a plurality of active regions; and a logic circuit. Each of a plurality of pixel groups in the pixel array includes a first pixel and a second pixel. The active regions in each of the first pixel and the second pixel include a first active region and a second active region. The first active region is adjacent to the first transfer gate. The second active region is adjacent to the second transfer gate. In each of the pixel groups, a plurality of source-follower transistors respectively has a gate connected to the first and second active regions of the first pixel and connected to the first and second active regions of the second pixel. The source-follower transistors are in the first pixel.


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