The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Oct. 28, 2022
Applicant:

Innolux Corporation, Miao-Li County, TW;

Inventors:

Ya-Li Tsai, Miao-Li County, TW;

Hui-Ching Yang, Miao-Li County, TW;

Yang-Jui Huang, Miao-Li County, TW;

Te-Yu Lee, Miao-Li County, TW;

Assignee:

INNOLUX CORPORATION, Miao-Li County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 23/50 (2023.01); G03B 7/083 (2021.01);
U.S. Cl.
CPC ...
H04N 23/50 (2023.01); G03B 7/083 (2013.01);
Abstract

A sensing device is provided herein, which operates in a reset period, an exposure period, and a readout period. The sensing device includes a first transistor, a second transistor, a detection device, and a third transistor. The first transistor includes a control terminal and a first terminal. The second transistor is coupled to the first transistor and configured to set the voltage of the control terminal during the exposure period. The sensing device is coupled to the first transistor and configured to change the voltage of the control terminal during the exposure period. The third transistor is coupled to the first transistor and includes an output terminal outputting a sense signal from the first terminal during the readout period. The first transistor is an N-type transistor and the third transistor is a P-type transistor.


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