The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Nov. 07, 2023
Qualcomm Incorporated, San Diego, CA (US);
Ramaprasath Vilangudipitchai, San Diego, CA (US);
Venkat Narayanan, San Diego, CA (US);
Giby Samson, San Diego, CA (US);
Venugopal Boynapalli, San Diego, CA (US);
QUALCOMM INCORPORATED, San Diego, CA (US);
Abstract
At least one integrated power management cell of an IC includes a first cell, which is a 4-height cell, that includes a first continuous n-well, a first power interconnect coupled to a first voltage source associated with a first voltage domain and to the first continuous n-well, a second continuous n-well, a second power interconnect coupled to a second voltage source associated with a second voltage domain and to the second continuous n-well, a first subset of a first voltage level shifter associated with the first voltage domain and coupled to the first power interconnect, and a second subset of the first voltage level shifter associated with the second voltage domain and coupled to the second power interconnect.