The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Jun. 18, 2021
Applicant:

Memsensing Microsystems (Suzhou, China) Co., Ltd., Suzhou, CN;

Inventors:

Ping Lv, Suzhou, CN;

Gang Li, Suzhou, CN;

Wei Hu, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/17 (2006.01); H03H 3/02 (2006.01); H03H 9/13 (2006.01);
U.S. Cl.
CPC ...
H03H 3/02 (2013.01); H03H 9/13 (2013.01); H03H 9/17 (2013.01);
Abstract

Disclosed are a bulk acoustic wave resonator and a fabrication method for the bulk acoustic wave resonator. The fabrication method includes: preparing a cavity with a top opening on a first silicon wafer; preparing an insulating layer on an upper surface of a second silicon wafer, and preparing a resonant piezoelectric stack on an upper surface of the insulating layer; preparing a first silicon dioxide layer on an upper surface of the resonant piezoelectric stack; bonding a surface where the top opening of the cavity is located with an upper surface of the first silicon dioxide layer; and preparing a lead out pad of the first electrode and the second electrode.


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