The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
May. 31, 2022
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/304 (2006.01); H01L 21/66 (2006.01); H01L 21/78 (2006.01); H01L 23/544 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/304 (2013.01); H01L 21/78 (2013.01); H01L 22/14 (2013.01); H01L 29/0634 (2013.01); H01L 29/7813 (2013.01); H01L 2223/5446 (2013.01);
Abstract
In a semiconductor device in a wafer state, an element region and a scribe region are defined in one main surface of a semiconductor substrate. In the element region, a vertical MOS transistor is formed as a semiconductor element. In the scribe region, an n-type column region and a p-type column region are defined. An n-type column resistor is formed in the n-type column region. A p-type column resistor is formed in the p-type column region.