The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Apr. 06, 2020
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/50 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/50 (2013.01); H01L 24/05 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/48491 (2013.01); H01L 2224/73265 (2013.01);
Abstract
Provided is a semiconductor device capable of suppressing an Al slide at a time of an operation under a high temperature in a laminated structure of an aluminum electrode layer and a copper electrode layer. Accordingly, in the semiconductor device according to the present disclosure, a first copper electrode layer includes a plurality of protruding regions as regions protruding toward the aluminum electrode layer in an interface with the aluminum electrode layer.