The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
May. 11, 2023
Tdk Corporation, Tokyo, JP;
Yuichiro Sueda, Tokyo, JP;
Kengo Aizawa, Tokyo, JP;
Shota Kumagai, Tokyo, JP;
Takeshi Shouji, Tokyo, JP;
Satoshi Sugawara, Tokyo, JP;
Masatoshi Tarutani, Tokyo, JP;
Atsushi Yamada, Yurihonjo, JP;
Manabu Kumagai, Yurihonjo, JP;
TDK CORPORATION, Tokyo, JP;
Abstract
A dielectric composition, including: dielectric grains containing a main component represented by a composition formula [(CaSr)O][(TiHfZr)O] (m is more than 1.020); a grain boundary phase located between the dielectric grains; and segregation grains each containing at least Ca, Si, and O. A first segregation grain is defined as a segregation further containing Mn among the segregation grains each containing at least Ca, Si, and O, and a second segregation grain is defined as a segregation containing substantially no Mn among the segregation grains each containing at least Ca, Si, and O. N1/(N1+N2) is more than 0.23 and 1.00 or less, in which N1 is a number density of first segregation grains in a cross-section of the dielectric composition, and N2 is a number density of second segregation grains in the cross-section of the dielectric composition.