The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Mar. 20, 2023
Qualcomm Incorporated, San Diego, CA (US);
Abhijeet Paul, Escondido, CA (US);
Mishel Matloubian, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Disclosed are techniques for a semiconductor structure. In an aspect, a semiconductor structure includes a conductive element on an isolation structure, a dielectric film, a first contact structure, wherein at least a portion of the dielectric film is disposed between the conductive element and the first contact structure, and a second contact structure disposed on and electrically coupled with the conductive element. The dielectric film is configured as a resistive element with the first contact structure and the second contact structure being terminals of the resistive element after a dielectric breakdown has occurred within the portion of the dielectric film. Also, the dielectric film is configured as an insulator of a capacitive element with the first contact structure and the second contact structure being terminals of the capacitive element in a case that no dielectric breakdown has occurred within the portion of the dielectric film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile