On-state voltage measurement of high-side and low-side power transistors in a half-bridge for in-situ prognostics

Abstract

Various examples are provided for on-state voltage sensing for in-situ monitoring and prognostics. In one example, an on-state monitoring circuit includes clamping circuitry including high-side and low-side voltage clamping circuits associated with high-side and low-side switching devices of a half-bridge (HB) leg of an converter, on-state voltage circuitry including high-side and low-side voltage measurement circuits, the high-side and low-side circuits referenced to the positive and negative buses of the converter respectively, and output circuitry including high-side and low-side isolation circuits that provide isolated outputs referenced to a control ground of the converter. In another example, an on-state voltage measurement circuit includes clamping circuitry including high-side and low-side voltage clamping circuits referenced to a common point between high-side and low-side switching devices of a HB leg, on-state voltage circuitry including high-side and low-side voltage measurement circuits and a voltage merger circuit, and output circuitry including an isolation circuit providing a single output containing both high-side on-state voltage and low-side on-state voltage.