The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Mar. 30, 2023
Applicants:
Seoul National University R&db Foundation, Seoul, KR;
Institute for Basic Science, Daejeon, KR;
Inventors:
Jungwon Park, Seoul, KR;
Kunwoo Park, Seoul, KR;
Assignees:
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul, KR;
INSTITUTE FOR BASIC SCIENCE, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/16 (2006.01); C30B 1/02 (2006.01); C30B 29/68 (2006.01);
U.S. Cl.
CPC ...
C30B 29/16 (2013.01); C30B 1/026 (2013.01); C30B 29/68 (2013.01);
Abstract
A ferroelectric thin film and a forming method thereof are provided. The method of forming a ferroelectric thin film according to embodiments of the present invention comprises forming a sacrificial seed layer on a first substrate, forming a ferroelectric thin film on the sacrificial seed layer, and transferring the ferroelectric thin film to a second substrate. The ferroelectric thin film according to embodiments of the present invention is formed by the method.