The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Mar. 31, 2022
Applicant:

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Koshi Nishida, Osaka, JP;

Kozo Yano, Osaka, JP;

Katsuhiko Kishimoto, Osaka, JP;

Susumu Sakio, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/04 (2006.01); C23C 14/12 (2006.01); H01L 51/00 (2006.01); H10K 71/16 (2023.01);
U.S. Cl.
CPC ...
C23C 14/042 (2013.01); C23C 14/12 (2013.01); H10K 71/166 (2023.02);
Abstract

A vapor deposition method and a vapor deposition apparatus that, when a vapor deposition material is deposited on a substrate, make it possible to form deposition layer pattern precisely so that the deposition layer pattern is formed uniformly without a gap formed between a deposition mask and the substrate. A deposition mask is disposed with its periphery held by a frame. A substrate on which a vapor deposition layer is to be formed is mounted over the deposition mask. A vapor deposition source is disposed facing the deposition mask and evaporates a vapor deposition material. The vapor deposition is performed while the substrate is pressed vertically at a position of a center of deflection of the deposition mask and on an upper surface of the substrate until that a length of the substrate substantially becomes identical to a length of the deposition mask being bowed down and expanded.


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