The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 03, 2025

Filed:

Jun. 17, 2021
Applicant:

Soochow University, Suzhou, CN;

Inventors:

Jianmei Lu, Suzhou, CN;

Najun Li, Suzhou, CN;

Assignee:

SOOCHOW UNIVERSITY, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J 27/00 (2006.01); B01J 23/30 (2006.01); B01J 27/04 (2006.01); B01J 27/22 (2006.01); B01J 35/39 (2024.01); C02F 1/30 (2023.01); C02F 1/72 (2023.01); C02F 101/22 (2006.01); C02F 101/34 (2006.01);
U.S. Cl.
CPC ...
B01J 27/22 (2013.01); B01J 23/30 (2013.01); B01J 27/04 (2013.01); B01J 35/39 (2024.01); C02F 1/30 (2013.01); C02F 1/725 (2013.01); C02F 2101/22 (2013.01); C02F 2101/345 (2013.01); C02F 2305/10 (2013.01);
Abstract

Disclosed are a Z-type heterojunction composite material of a tungsten oxide nanorod/a titanium carbide quantum dot/an indium sulfide nanosheet, a preparation method therefor and an application thereof. The method includes: preparing a titanium carbide quantum dot by using freeze-thaw and ultrasound methods for multiple times, and then placing a tungsten trioxide nanorod prepared by a hydrothermal method into a titanium carbide quantum dot aqueous solution, stirring same, and then standing same to obtain a tungsten oxide nanorod loading a quantum dot; stirring and uniformly mixing an indium compound and a sulfur compound in an ethylene glycol solvent, and then adding the tungsten oxide nanorod loading the quantum dot, and performing a reflux reaction at constant temperature to obtain the composite material. The titanium carbide quantum dot of the present invention can provide good electron transport channels at different semiconductor interfaces.


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