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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12317742 B1

PDFFull Text
Date of Patent:
May. 27, 2025

Filed:

Nov. 02, 2021

Light-emitting device and electronic apparatus including the same

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jongwon Lee, Yongin-si, KR;

Namsu Kang, Yongin-si, KR;

Minho Park, Yongin-si, KR;

Heungsu Park, Yongin-si, KR;

Minkyung Kim, Yongin-si, KR;

Hyunshik Lee, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:

Womble Bond Dickinson (US) LLP

Primary Examiner:

Vu A Nguyen

Int. Cl.
CPC ...
H10K 85/60 (2023.01); H10K 50/11 (2023.01); H10K 50/13 (2023.01); H10K 50/165 (2023.01); H10K 85/30 (2023.01); H10K 101/10 (2023.01); H10K 101/30 (2023.01); H10K 101/40 (2023.01);
U.S. Cl.
CPC ...
H10K 85/654 (2023.02); H10K 85/324 (2023.02); H10K 85/622 (2023.02); H10K 85/626 (2023.02); H10K 85/6572 (2023.02); H10K 85/6574 (2023.02); H10K 50/11 (2023.02); H10K 50/13 (2023.02); H10K 50/165 (2023.02); H10K 2101/10 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02);
Abstract

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; m light-emitting units stacked between the first electrode and the second electrode and including an emission layer; and m−1 charge generation layers respectively between two neighboring light-emitting units among the m light-emitting units, wherein m is an integer of 2 or more, at least one of the m light-emitting units includes an n-doped electron transport layer between the emission layer and the second electrode, a charge generation layer on the n-doped electron transport layer includes a p-type charge generation layer in direct contact with the n-doped electron transport layer, the n-doped electron transport layer includes a first electron transport material, a second electron transport material, and a metal, the first electron transport material and the second electron transport material are different from each other.

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