The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Mar. 14, 2022
Applicant:

The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);

Inventors:

Yuxin Liu, Stanford, CA (US);

Yuqing Zheng, Stanford, CA (US);

Zhenan Bao, Stanford, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 71/40 (2023.01); H10K 10/46 (2023.01); H10K 10/84 (2023.01); H10K 71/60 (2023.01); H10K 77/10 (2023.01); H10K 85/10 (2023.01);
U.S. Cl.
CPC ...
H10K 71/40 (2023.02); H10K 10/471 (2023.02); H10K 10/481 (2023.02); H10K 10/484 (2023.02); H10K 10/84 (2023.02); H10K 71/60 (2023.02); H10K 10/464 (2023.02); H10K 10/466 (2023.02); H10K 77/111 (2023.02); H10K 85/111 (2023.02); H10K 85/1135 (2023.02); H10K 85/141 (2023.02); H10K 85/151 (2023.02);
Abstract

A method of making flexible and stretchable semiconductor devices with reduced footprints can include coating a gate electrode layer having a first composition over an elastomer layer, solidifying a portion of the gate electrode layer by irradiation to form a gate electrode, coating a dielectric layer having a second composition over the gate electrode layer, solidifying a portion of the dielectric layer by the irradiation to form a gate dielectric, coating a semiconductor layer having a third composition over the dielectric layer, solidifying a portion of the semiconductor layer by the irradiation to form a device core, coating a terminal layer having the first composition over the dielectric layer, and solidifying a portion of the terminal layer by the irradiation to form a source electrode and a drain electrode contacting the semiconductor layer.


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