The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Jan. 17, 2020
Applicant:
Technische Universität Dresden, Dresden, DE;
Inventors:
Assignee:
Flexora GmbH, Dresden, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10K 10/46 (2023.01); H10K 10/84 (2023.01); H10K 10/88 (2023.01);
U.S. Cl.
CPC ...
H10K 10/464 (2023.02); H10K 10/481 (2023.02); H10K 10/84 (2023.02); H10K 10/88 (2023.02);
Abstract
An organic thin film transistor (OTFT), in particular thin-film field-effect transistor (OFET), that includes a substrate, a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer. The source electrode, the drain electrode, and the gate electrode are arranged in a coplanar layer structure. The organic thin-film transistor has an intermediate layer for the capacitive decoupling of the gate electrode from the source electrode and/or from the drain electrode.