The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Aug. 12, 2020
Arizona Board of Regents on Behalf of Arizona State University, Scottsdale, AZ (US);
The University of North Carolina AT Chapel Hill, Chapel Hill, NC (US);
Zhengshan Yu, Gilbert, AZ (US);
Zachary Holman, Phoenix, AZ (US);
Bo Chen, Chapel Hill, NC (US);
Jinsong Huang, Chapel Hill, NC (US);
Arizona Board of Regents on behalf of Arizona State University, Scottsdale, AZ (US);
The University of North Carolina at Chapel Hill, Chapel Hill, NC (US);
Abstract
A tandem photovoltaic device includes a silicon photovoltaic cell having a silicon layer, a perovskite photovoltaic cell having a perovskite layer, and an intermediate layer between a rear side of the perovskite photovoltaic cell and a front (sunward) side of the silicon photovoltaic cell. The front side of the silicon layer has a textured surface, with a peak-to-valley height of structures in the textured surface of less than 1 μm or less than 2 μm. The textured surface is planarized by the intermediate layer or a layer of the perovskite photovoltaic cell. Forming the tandem photovoltaic device includes texturing a silicon containing layer of a silicon photovoltaic cell and operatively coupling a perovskite photovoltaic cell comprising a perovskite layer to the silicon photovoltaic cell, thereby forming a tandem photovoltaic device and planarizing the textured surface of the silicon containing layer of the silicon photovoltaic cell.