The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Aug. 23, 2022
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Kazuhiro Morimoto, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8057 (2025.01); H10F 39/18 (2025.01); H10F 39/806 (2025.01); H10F 39/8063 (2025.01); H10F 39/8067 (2025.01); H10F 39/807 (2025.01);
Abstract

A photoelectric conversion apparatus includes a plurality of avalanche diodes and a light shielding portion. The plurality of avalanche diodes is disposed in a semiconductor layer having a first surface and a second surface facing the first surface. The light shielding portion has an opening. The light shielding portion covers at least part of the first surface. Each of the plurality of avalanche diodes includes a first semiconductor region of a first conductivity type disposed at a first depth, and a second semiconductor region of a second conductivity type disposed at a second depth deeper than the first depth with respect to the second surface. The semiconductor layer includes a plurality of uneven structures provided on the first surface. In a planar view from a direction perpendicular to the first surface, the second semiconductor region overlaps the light shielding portion, and the first semiconductor region is included in the opening.


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