The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Oct. 28, 2020
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Takahiro Miura, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); G01S 17/894 (2020.01); H10F 30/225 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/18 (2025.01); G01S 17/894 (2020.01); H10F 30/225 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01);
Abstract

Provided is a semiconductor device capable of improving the optical response speed. The semiconductor device includes a pixel array portion in which a plurality of pixels are arranged in a matrix, each of the plurality of pixels including: a pixel forming region partitioned by a separation region in a semiconductor layer; a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type sequentially arranged from a first surface side of the pixel forming region toward a second surface side opposite to the first surface; a pn junction portion in which the first semiconductor region and the second semiconductor region are bonded; a charge extraction region of the second conductivity type provided in a side wall of the separation region; and a relay region of the second conductivity type provided at a position deeper than the second semiconductor region so as to be connected to the charge extraction region and the second semiconductor region. A plurality of the pn junction portions are scattered apart from each other, and the relay region has a higher impurity concentration than the second semiconductor region and terminates at a peripheral portion so as to surround a central portion of a surface of the second semiconductor region opposite to the pn junction portion side.


Find Patent Forward Citations

Loading…