The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Nov. 01, 2022
Canon Kabushiki Kaisha, Tokyo, JP;
Hiroshi Sekine, Kanagawa, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A photoelectric conversion element provided in a semiconductor layer having first and second surfaces includes a first region of a first conductivity type, a second region of a second conductivity type closer to the second surface than the first region and forming a p-n junction with the first region, a third region of the first conductivity type closer to the second surface than the second region, a fourth region of the second conductivity type closer to the second surface than the third region, a fifth region of the second conductivity type between the third fourth regions, and a sixth region of the second conductivity type surrounding a region where the first, second, third, and fifth regions are disposed in a plan view. The fifth region has an area smaller than that of the third region in the plan view, and overlaps with the first region in the plan view.