The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Jan. 17, 2019
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Hitoshi Kunitake, Kanagawa, JP;
Shuhei Nagatsuka, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device in which an electrification phenomenon that leads to characteristic fluctuations, element deterioration, or dielectric breakdown is inhibited is provided. A first transistor, a second transistor, a third transistor, and a fourth transistor are included over a substrate; the fourth transistor includes a first conductor, a second conductor, a third conductor, and an oxide semiconductor; the first conductor is electrically connected to the semiconductor substrate through the first transistor; the second conductor is electrically connected to the semiconductor substrate through the first transistor; the third conductor is electrically connected to the semiconductor substrate through the first transistor; and the fourth conductor is electrically connected to the semiconductor substrate through the first transistor.