The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Jun. 02, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sungil Park, Suwon-si, KR;
Jaehyun Park, Hwaseong-si, KR;
Hyo-Jin Kim, Bucheon-si, KR;
Hyojin Kim, Seoul, KR;
Daewon Ha, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a first device including first active regions and first to third structures thereon, and a second device including a second active region, a gate structure intersecting the second active region, and a source/drain region including a lower source/drain region on the second active region having first-type conductivity, an inter-source/drain region insulating layer on the lower source/drain region, and an upper source/drain region on the inter-source/drain region insulating layer and having second-type conductivity. The first structure includes first lower and upper impurity regions. The second structure includes a second lower impurity region having the first-type conductivity, an inter-impurity region insulating layer, and a second upper impurity region having the second-type conductivity. The third structure includes third lower and upper impurity regions having the second-type conductivity, the third upper impurity region having an impurity concentration higher than a that of the third lower impurity region.