The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

May. 11, 2023
Applicant:

University of Delaware, Newark, DE (US);

Inventors:

BingQing Wei, Newark, DE (US);

Zhigang Li, Newark, DE (US);

Assignee:

University of Delaware, Newark, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/22 (2025.01); H10D 8/30 (2025.01); H10D 64/20 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 8/30 (2025.01); H10D 64/205 (2025.01); H10D 64/62 (2025.01);
Abstract

A super-semiconductor (SSC), semiconductor devices including the SSC, and methods for making the SSC. The SSC includes a bimetallic nanostructured array having a substrate and a nanoshell array disposed on the substrate. The nanoshell array is defined by a plurality of non-close-packed, non-conductive, core bodies disposed on the substrate, a first metal layer disposed on the non-conductive core bodies and on the substrate in areas located between adjacent non-conductive core-bodies, and at least a second metal layer disposed on the first metal layer, wherein the second metal is different than the first metal. The bimetallic nanostructured array exhibits p-type or n-type metal conductivity above a transition temperature, and in embodiments, exhibits resistivity in a range of 10-10ohm*m at a temperature of 300K+/−40K.


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