The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
May. 09, 2024
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventors:
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/00 (2025.01); H01L 21/265 (2006.01); H10D 8/50 (2025.01); H10D 12/00 (2025.01); H10D 30/60 (2025.01); H10D 62/17 (2025.01); H10D 62/60 (2025.01); H10D 84/40 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 62/60 (2025.01); H01L 21/265 (2013.01); H10D 8/00 (2025.01); H10D 8/411 (2025.01); H10D 8/50 (2025.01); H10D 12/00 (2025.01); H10D 12/481 (2025.01); H10D 30/60 (2025.01); H10D 62/393 (2025.01); H10D 84/406 (2025.01); H10D 62/103 (2025.01);
Abstract
A semiconductor device including a drift region and a buffer region is provided. The drift region of a first conductivity type is provided in a semiconductor substrate. The buffer region of the first conductivity type includes at least six peaks in a doping concentration distribution in a depth direction of the semiconductor substrate. A curve connecting the at least six peaks includes an upwardly-convex portion.