The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Feb. 17, 2023
Nuvoton Technology Corporation Japan, Kyoto, JP;
Akihiko Nishio, Ishikawa, JP;
Hiroyuki Doi, Toyama, JP;
NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto, JP;
Abstract
A semiconductor device for high-frequency amplification includes a substrate; a first nitride semiconductor layer above the substrate; a two-dimensional electron gas layer; a second nitride semiconductor layer; and a source electrode, a drain electrode, and a gate electrode spaced apart from each other above the first nitride semiconductor layer. In a plan view, an active region with a two-dimensional electron gas layer includes a high-electron-mobility transistor and the resistor provided above the second nitride semiconductor layer. In the plan view, a non-active region includes a drain terminal and a gate terminal connected to the drain electrode or the gate electrode; and a first resistor terminal and a second resistor terminal connected to the resistor.