The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Jan. 28, 2022
Applicant:

Cansemi Technology Inc., Guangdong, CN;

Inventors:

Xiang Liu, Guangdong, CN;

Jiaxi Wang, Guangdong, CN;

Assignee:

CANSEMI TECHNOLOGY INC., Guangzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10D 1/716 (2025.01); H10D 1/696 (2025.01);
Abstract

Disclosed are a metal-insulator-metal (MIM) capacitor structure and a method for fabricating the structure. The MIM capacitor structure includes: a substrate; a capacitor structure comprising a bottom metal layer, an interlayer dielectric layer and a top metal layer sequentially stacked over the substrate; an opening extending downward through the top metal layer into the interlayer dielectric layer; a recess located at a side wall of the opening, and extending from a bottom of the opening downward into the interlayer dielectric layer; and a sidewall spacer located in the opening, which extends over a side wall of the top metal layer and downward into the recess so as to fill it up, wherein the interlayer dielectric layer is made of the same material as the sidewall spacer. The MIM capacitor structure and a fabricating method therefor can improve the breakdown voltage of the MIM capacitor structure.


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