The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Nov. 17, 2022
Auo Corporation, Hsinchu, TW;
Chen-Shuo Huang, Hsinchu, TW;
AUO Corporation, Hsinchu, TW;
Abstract
A memory device includes a substrate, an oxide insulating layer, a first metal oxide layer, a first gate dielectric layer, a second metal oxide layer, a second gate dielectric layer, a first gate, a source, and a drain. The oxide insulating layer is located above the substrate. The first metal oxide layer is located above the oxide insulating layer. The first gate dielectric layer is located above the first metal oxide layer. The second metal oxide layer is located above the first gate dielectric layer. The second gate dielectric layer is located above the second metal oxide layer. The first gate is located above the second gate dielectric layer. The second metal oxide layer is located between the first gate and the first metal oxide layer. The source and the drain are electrically connected to the first metal oxide layer.