The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Feb. 24, 2022
Seiko Epson Corporation, Tokyo, JP;
Sophia School Corporation, Tokyo, JP;
Shunsuke Ishizawa, Tokyo-to, JP;
Katsumi Kishino, Akiruno, JP;
SEIKO EPSON CORPORATION, Tokyo, JP;
SOPHIA SCHOOL CORPORATION, Tokyo, JP;
Abstract
A light emitting apparatus includes a laminated structure provided at a substrate and including a plurality of columnar sections. The plurality of columnar sections each includes a light emitting layer including a plurality of first well layers, a first semiconductor layer provided between the substrate and the light emitting layer and containing Ga and N, an optical confining layer provided between the first semiconductor layer and the light emitting layer and confining light in the light emitting layer, and a second well layer provided between the first semiconductor layer and the optical confining layer. The first well layers and the second well layer are made of InGaN. The optical confining layer includes an InGaN layer. The composition formula of the first well layers is InGaN. The composition formula of the InGaN layer of the optical confining layer is InGaN. The composition formula of the second well layer is InGaN. The parameters x, y, and z satisfy 0<y<z<x<1.