The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Nov. 17, 2022
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Assignee:
Kioxia Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 24/08 (2013.01); H01L 25/18 (2013.01); H01L 2224/08145 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06593 (2013.01); H01L 2225/06596 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract
According to one embodiment, a semiconductor memory device includes a memory cell, a first voltage generator and a second voltage generator. The memory cell is provided above a substrate. The first voltage generator is provided between the substrate and the memory cell. The first voltage generator is configured to generate a first voltage to be supplied to the memory cell. The second voltage generator is provided between the substrate and the memory cell. The second voltage generator is configured to generate the first voltage and have a circuit configuration equivalent to the first voltage generator.