The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Mar. 21, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jongmin Baek, Seoul, KR;
Junghoo Shin, Seoul, KR;
Sangshin Jang, Seoul, KR;
Junghwan Chun, Anyang-si, KR;
Kyeongbeom Park, Suwon-si, KR;
Suhyun Bark, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate having an active region, a first insulating layer on the substrate, a second insulating layer on the first insulating layer, an etch stop layer between the first insulating layer and the second insulating layer, a via contact in the first insulating layer and electrically connected to the active region, an interconnection electrode in the second insulating layer and electrically connected to the via contact, a conductive barrier layer on a side surface and a lower surface of the interconnection electrode and having an extension portion extending to a partial region of a side surface of the via contact, and a side insulating layer on a side region of the via contact below the extension portion of the conductive barrier layer, the side insulating layer including the same material as a material of the etch stop layer.