The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Apr. 19, 2022
Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

Timothy Boles, Santa Clara, CA (US);

David Hoag, Santa Clara, CA (US);

Luis Baez, Santa Clara, CA (US);

Margaret Barter, Santa Clara, CA (US);

James Brogle, Santa Clara, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/291 (2013.01); H01L 21/561 (2013.01); H01L 23/3171 (2013.01); H01L 23/3185 (2013.01); H01L 23/3192 (2013.01); H01L 23/293 (2013.01);
Abstract

A semiconductor device architecture includes a silicon substrate having sidewalls that are passivated by encapsulating the sidewalls in dielectric materials having high electric field strength. Encapsulating all the sidewalls using high field strength dielectric materials eliminates electrical paths in air or vacuum and confines the electric fields in these high field strength materials, increasing the breakdown voltage relative to unencapsulated devices and allowing the device to withstand greater standoff voltages. In some cases, encapsulating the sidewalls in this manner can allow the device to withstand voltages of 500V or greater.


Find Patent Forward Citations

Loading…