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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12315763 B1

PDFFull Text
Date of Patent:
May. 27, 2025

Filed:

Aug. 03, 2022

Three-dimensional memory device and method of making thereof using sacrificial carbon-containing barrier film

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Younghoon Goo, Busan, KR;

Dongyoung Kim, Pohang-si, KR;

Kyungtae Jang, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Alia Sabur

Assistant Examiner:

Emily Nicole Farmer

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/50 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); H01L 21/76804 (2013.01); H01L 21/76861 (2013.01); H01L 21/76877 (2013.01); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/50 (2023.02);
Abstract

To manufacture a semiconductor device, a structure is formed by alternately stacking a plurality of first films and a plurality of second films one-by-one on a substrate. A vertical hole is formed to vertically pass through the structure. A carbon-containing barrier film is formed to conformally cover an inner sidewall of the vertical hole. The carbon-containing barrier film is in contact with portions of the plurality of first films and the plurality of second films. A sacrificial metal film is formed on the carbon-containing barrier film in the vertical hole. The sacrificial metal film is removed to expose the carbon-containing barrier film. The carbon-containing barrier film is removed using an ashing process.

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Goo, Younghoon. (2025). Three-dimensional memory device and method of making thereof using sacrificial carbon-containing barrier film (U.S. Patent No. 12315763). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12315763

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