The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Jun. 02, 2021
Applicant:

Phison Electronics Corp., Miaoli, TW;

Inventors:

Yu-Siang Yang, New Taipei, TW;

Wei Lin, Taipei, TW;

Shih-Jia Zeng, Hsinchu, TW;

An-Cheng Liu, Taipei, TW;

Yu-Cheng Hsu, Yilan County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0655 (2013.01); G06F 3/0604 (2013.01); G06F 3/0679 (2013.01);
Abstract

A data accessing method, a memory controlling circuit unit, and a memory storage device are provided. The method includes: reading a codeword stored in a physical programming unit, and calculating a bit change ratio of a bit value change in dummy data included in the codeword; adjusting a read voltage level or a log likelihood ratio according to the bit change ratio; and performing a decoding operation on the codeword by using the adjusted read voltage level or the adjusted log likelihood ratio.


Find Patent Forward Citations

Yang, Yu-Siang. (2025). Method for adjusting a read voltage level or log likelihood ratio of a memory based on a calculated bit change ratio, memory controlling circuit unit, and memory storage device (U.S. Patent No. 12314599). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12314599

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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