The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Jun. 09, 2021
Applicant:

Rockley Photonics Limited, Altrincham, GB;

Inventors:

Aaron John Zilkie, Pasadena, CA (US);

Henri Nykänen, Espoo, FI;

Frank Peters, Dublin, IE;

Charles Su-Chang Tsai, Pasadena, CA (US);

Guomin Yu, Pasadena, CA (US);

Assignee:

Rockley Photonics Limited, Altrincham, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/122 (2006.01); G02B 6/136 (2006.01);
U.S. Cl.
CPC ...
G02B 6/12004 (2013.01); G02B 6/122 (2013.01); G02B 6/136 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12107 (2013.01); G02B 2006/12161 (2013.01);
Abstract

An optoelectronic device. The device comprises: a silicon-on-insulator platform, including a silicon waveguide, formed in a silicon device layer, a silicon substrate, and a cavity; a III-V semiconductor based device, located within the cavity of the silicon-on-insulator platform and containing a III-V semiconductor based waveguide which is coupled to the silicon waveguide. A region of a bed of the cavity, located between the III-V semiconductor based device and the substrate, includes a patterned surface, which is configured to interact with an optical signal within the III-V semiconductor based waveguide of the III-V semiconductor based device.


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