The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Dec. 10, 2024
Power Technology Solutions Llc, Palo Alto, CA (US);
Stephen Ludvik, Palo Alto, CA (US);
John McKay, Santa Clara, CA (US);
Power Technology Solutions LLC, Palo Alto, CA (US);
Abstract
A system and method of using a multi-zone substrate to perform electromigration testing of integrated circuits in the high-frequency RF domain. Here, the device under test (DUT) is affixed to a single, multi-zone substrate with a high-temperature zone, a transitional thermal isolation zone, to a low-temperature zone. The high-temperature zone has a DUT interface with a localized heater arrangement. The low-temperature zone provides the interface with RF lines to the RF test instrumentation. The DUT input and output pins are attached to the high-temperature zone, and the configuration allows both direct current (DC) and RF stressing of the DUT. The high-temperature zone can raise the DUT temperature to 300-450° C. The RF test port and associated test equipment remain at room temperature.