The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Jul. 10, 2023
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Tom E. Blomberg, Vantaa, FI;
Varun Sharma, Helsinki, FI;
Suvi Haukka, Helsinki, FI;
Marko Tuominen, Espoo, FI;
Chiyu Zhu, Helsinki, FI;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 4/02 (2006.01); C09K 13/00 (2006.01); C09K 13/08 (2006.01); C09K 13/10 (2006.01); C23F 1/12 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
C23F 4/02 (2013.01); C09K 13/00 (2013.01); C09K 13/08 (2013.01); C09K 13/10 (2013.01); C23F 1/12 (2013.01); H01J 37/32009 (2013.01); H01J 37/3244 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/32135 (2013.01); H01L 21/31138 (2013.01);
Abstract
Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.