The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Jun. 02, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Incheon National University Research & Business Foundation, Incheon, KR;
Eunhyoung Cho, Suwon-si, KR;
Hanboram Lee, Seoul, KR;
Sunghee Lee, Suwon-si, KR;
Jeongyub Lee, Yongin-si, KR;
Chi Thang Nguyen, Incheon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Incheon National University Research & Business Foundation, Incheon, KR;
Abstract
A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer by adsorbing a reaction inhibitor onto a side wall of the gap, forming a first precursor layer by adsorbing a first reactant onto the bottom of the gap and the side wall of the gap around the bottom of the gap, and forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap. The reaction inhibitor includes a precursor material that does not react with a second reactant. The first reaction inhibition layer may have a density gradient in which a density of the reaction inhibitor decreases toward a bottom of the gap. The forming the first atomic layer includes adsorbing the second reactant onto the first precursor layer.