The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Jul. 17, 2023
Chongqing Huapu Scientific Instrument Co., Ltd., Chongqing, CN;
Roi Optoelectronics Technology Co, Ltd., Shanghai, CN;
Yunnan Huapu Quantum Material Co., Ltd, Yunnan, CN;
Chongqing Huapu Quantum Technology Co., Ltd., Chongqing, CN;
East China Normal University, Shanghai, CN;
Chongqing Institute of East China Normal University, Chongqing, CN;
CHONGQING HUAPU SCIENTIFIC INSTRUMENT CO., LTD., Chongqing, CN;
ROI OPTOELECTRONICS TECHNOLOGY CO, LTD., Shanghai, CN;
YUNNAN HUAPU QUANTUM MATERIAL CO., LTD, Yunnan, CN;
CHONGQING HUAPU QUANTUM TECHNOLOGY CO., LTD., Chongqing, CN;
EAST CHINA NORMAL UNIVERSITY, Shanghai, CN;
CHONGQING INSTITUTE OF EAST CHINA NORMAL UNIVERSITY, Chongqing, CN;
Abstract
A processing method and apparatus for ultrafast laser deposition of a multilayer film including a diamond-like carbon film, an anti-reflection film and an anti-fingerprint film includes: generating primary plasma by first excitement on a target material with a femtosecond or picosecond pulsed laser beam as a pre-pulse; and generating secondary plasma by second excitement on the target material under plasma grating, formed by allowing two femtosecond pulsed laser beams to intersect at a small include angle for interaction in the primary plasma, for deposition to coat a film.