The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Apr. 14, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sanghwan Park, Suwon-si, KR;

Younghyun Kim, Seoul, KR;

Jaehoon Kim, Seoul, KR;

Jeongheon Park, Hwaseong-si, KR;

Sechung Oh, Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02);
Abstract

A magnetic device includes a seed pattern, a reference magnetic structure on the seed pattern, a free magnetic pattern on the reference magnetic structure, and a tunnel barrier between the reference magnetic structure and the free magnetic pattern. The reference magnetic structure includes a synthetic antiferromagnetic (SAF) structure including a first fixed pattern in contact with an upper surface of the seed pattern, an antiferromagnetic coupling pattern in contact with an upper surface of the first fixed pattern, and a second fixed pattern in contact with an upper surface of the antiferromagnetic coupling pattern; a nonmagnetic pattern in contact with an upper surface of the second fixed pattern; and a polarization reinforcement magnetic pattern in contact with an upper surface of the nonmagnetic pattern.


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