The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

May. 31, 2022
Applicant:

Allegro Microsystems, Llc, Manchester, NH (US);

Inventors:

Sundar Chetlur, Frisco, TX (US);

Maxim Klebanov, Palm Coast, FL (US);

Yen Ting Liu, Hsinchu, TW;

Paolo Campiglio, Arcueil, FR;

Assignee:

Allegro MicroSystems, LLC, Manchester, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/00 (2006.01); G01R 33/09 (2006.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); G01R 33/0052 (2013.01); G01R 33/093 (2013.01); G01R 33/098 (2013.01);
Abstract

In one aspect, a method includes depositing a capping layer on a semiconductor device structure. The semiconductor device includes a plurality of tunneling magnetoresistance (TMR) elements, a corresponding one hard mask on each TMR element, a metal layer, and a plurality of electroconductive vias directly connecting the TMR elements to the metal layer. The method further includes depositing an insulator on the capping layer, depositing a first photoresist on the insulator, patterning the first photoresist using photolithography to expose portions of the insulator, etching the exposed portions of the insulator and the hard masks to expose top surfaces of the TMR elements, stripping the first photoresist, and depositing a conducting material on the top surfaces of the TMR elements to form an electroconductive contact.


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