The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

May. 18, 2020
Applicant:

Aledia, Echirolles, FR;

Inventors:

Ivan-Christophe Robin, Grenoble, FR;

Wei-Sin Tan, Grenoble, FR;

Frédéric Mayer, Voiron, FR;

Assignee:

Aledia, Echirolles, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/812 (2025.01); H01L 25/16 (2023.01); H10H 20/816 (2025.01); H10H 20/825 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10H 20/812 (2025.01); H01L 25/167 (2013.01); H10H 20/8162 (2025.01); H10H 20/825 (2025.01); H10H 20/857 (2025.01);
Abstract

An optoelectronic device including at least first and second light-emitting diodes, each including a first P-type doped semiconductor portion and a second N-type doped semiconductor portion, an active area including multiple quantum wells between the first and second semiconductor portions, a conductive layer covering the lateral walls of the active area and of at least a portion of the first semiconductor portion, and an insulating layer interposed between the lateral walls of the active area and of at least a portion of the conductive layer. The device includes means for controlling the conductive layer of the first light-emitting diode independently from the conductive layer of the second light-emitting diode.


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