The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

May. 13, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Wonseok Lee, Suwon-si, KR;

Eunsub Shim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 39/014 (2025.01); H10F 39/802 (2025.01); H10F 39/8037 (2025.01); H10F 39/805 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01);
Abstract

An image sensor includes: photodiodes arranged in a substrate; active pillars connected to the photodiodes and extending in a vertical direction perpendicular to a bottom surface of the substrate; at least two transistors stacked in the vertical direction, wherein portions of the active pillars are channel areas of the at least two transistors; a floating diffusion (FD) area disposed under a transfer transistor, which is one of the at least two transistors, wherein the FD area is configured to receive charge from the photodiode through the transfer transistor and the portions of the active pillars; and a light transmitting layer disposed on a top surface of the substrate.


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